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Friday 24 May 2024




Seyed amir Hashemi

Assistant Professor

Electrical Engineering-Electronics

Faculty of Technology and Engineering

Tel: 32324401-2305

hashemi.amir@eng.sku.ac.ir

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Research Interest
   Modeling of electrical properties of Semiconductor Devices (Signal and Noise Regim): Electrical propertie of semiconductor devices are modeled by basic physic concepts and mathematical formulas are extracted for them.

Academic Resume
   Phd, Electrical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Iran، Graduation Date: 2012
   Master, Electrical Engineering, Amirkabir University of Technology (Tehran Polytechnic), Iran، Graduation Date: 2006
   Bachelor, Electrical Engineering, K.N.Toosi University of Technology , Iran، Graduation Date: 2003

Publications
International Journal
1. S.A. Hashemi et al, Modeling Subthreshold Slope and DIBL in Quasi-Ballistic Surrounding Gate MOSFETs , International Journal of Electronics and Electrical Engineering 6:48-52, 2018, DOI: 10.18178/ijeee.6.3.48-52
2. S.A. Hashemi et al, Semianalytical Modeling of Effects of the Depletion Layers on Threshold Voltage of a Junctionless Double Gate MOSFET Including Trapped Charges , International Journal of Numerical Modelling Electronic Networks Devices and Fields 31:1-18, 2018, DOI: 10.1002/jnm.2343
3. S.A Hashemi et al, Phase noise of electrical oscillators due to multi-Lorentzian noise sources based on the LTV model , IET Microwaves, Antennas & Propagation 11:1549-1557, 2017, DOI: 10.1049/iet-map.2016.0708
4. S.A Hashemi et al, Increasing ION/IOFF by embedding a low doped buried layer in the channel of a dual-material double-gate junctionless MOSFET , International Journal of Numerical Modelling Electronic Networks Devices and Fields 1:1-15, 2019, DOI: 10.1002/jnm.2677
5. S.A. Hashemi et al, Modeling of Fringing Capacitances of Ion-Implanted Double-Gate Junctionless FETs Using Conformal Mapping , IEEE Transactions on Electron Devices 66:4126-4133, 2019, DOI: 10.1109/TED.2019.2937205
6. S.A Hashemi et al, Double-Gate Field-Effect Diode: A Novel Device for Improving Digital-and-Analog Performance , IEEE Transactions on Electron Devices 67:18-25, 2020, DOI: 10.1109/TED.2019.2955638
7. R. Molavi, S.A. Hashemi, Comments on “A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET—Two-Dimensional Analytical Modeling and Simulation" , IEEE Trans. On Nanotechnology, To be Published, DOI: :10.1109/TNANO.2014.2310738
8. S. A. Hashemi, H. Ghafoorifard, A. Abdipour, Extension of the LTV Phase Noise Model of Electrical Oscillators for the Output Harmonics , IEICE Trans. On Electronics, Vol. E95-C, No. 12, pp. 1846-1856, Dec. 2012
9. S. A. Hashemi, H. Ghafoorifard, A. Abdipour, Amplitude Noise Investigation in Electrical Oscillators Based on the LTV model , Journal of Electronics and Electrical Engineering, Vol. 18, No. 8, pp 31-36, Oct. 2012
10. S. A. Hashemi, H. Ghafoorifard, A. Abdipour,, Superposition properties of Phase Noise based on the LTV Model , Analog Integrated Circuits, Springer, Vol. 73, No. 1, pp 423-426, Oct. 2012
Research Journal
١١. سید امیر هاشمی, مدل تحليلي پتانسيل و ولتاژ آستانه ترانزيستور ماسفت دوگيتي با گيت دوماده اي بدون آلايش , مجله مهندسي برق دانشگاه تبريز - شماره 47- صص 1759-1759- سال 1396
١٢. سید امیر هاشمی, مدل تحليلي جريان الکتريکي مبتني بر بار با در نظر گرفتن ميدان الکتريکي عرضي براي نانو ترانزيستور ماسفت دو گيتي , مجله مهندسي برق دانشگاه تبريز - شماره 48- صص 1867-1878 - سال 1397
International Conference
13. SA. Hashemi, A. Abdipour, A. Fassihi, A New Approach to Distributed Modeling of MESFETs , IEEE conference on Asia-Pacific Microwave Conference (APMC), China, 2005
14. Hashemi SA, Ghofoorifard H,, The Effect of Input Resistance on Variations of Small Signal Parameters of A Distributed MESFET Transistor , IEEE Conference on Electron-Devices and Solid-State Circuits (EDSSC), Taiwan, 2007
15. Khorasaninejad M., Hashemi SA,, A Novel Exponential Structure for Silicon Waveguides for Increasing Net Optical Raman Gain , IEEE National Conference on Telecommunication Technologies and Malaysia Conference on Photonics, Malaysia, 2008
16. Ghanadian Z., Hashemi SA, , A Compact Model of the Long Channel Undoped Surrounding Gate MOSFETs based on the Carrier-Based Approach , 4th international conference on electrical, computer, mechanical and mechatronics engineering (ICE2016), Dubai, Feb. 2016
17. Ramezani B., Hashemi SA,, Channel Potential of Nanowire MOSFETs with considering the Quantum Gate Capacitance , 7th International Congress on Nanoscience and Nanotechnology (ICNN 2018), Research institute of Petrolium Industry, Tehran, 2018
18. Beigi K., Hashemi SA,, A Double-Gate Junctionless MOSFET with GaAs Gaussian-Doped channel for Reducing Short Channel Effects , 7th International Congress on Nanoscience and Nanotechnology (ICNN 2018), Research institute of Petrolium Industry, Tehran, 2018
19. Ghaffari dehkordi M, Hashemi SA , Analytical Model for the Threshold Voltage of a Double Gate Tunneling MOSFET Including the Source/Drain Depletion Regions , 10th International Conference on Information Technology and Electrical Engineering, Bali, Indonesia, 2018
National Conference
٢٠. بيگی هرچگانی ک، هاشمی ا, مدل دو بعدی نانو ترانزيستورهای دو گيتی بدون اتصال در حضور حاملهای داغ , سومين كنفرانس ملی پژوهشهای كاربردی در برق، مكانيك و مكاترونيك - دانشگاه مالک اشتر - 1394
٢١. سليمانی دهکردی ن، هاشمی ا, تحليل شيب زير آستانه ترانزيستور ماسفت دو گيتی با گيت دو ماده ای متقارن , چهارمین كنفرانس ملی پژ‍وهشهای كاربردی در مهندسی برق،‌ مكانيك و مكاترونيك - دانشگاه مالک اشتر - 1395
٢٢. ملکپور ا، هاشمی ا, طراحی يک گيت معکوس کننده مستقل مبتنی بر پيوند لغزش فاز کوانتومی برای محاسبات کوانتومی , اولين کنفرانس ميکروالکترونيک ايران - پژوهشکده میکروالکترونیک - 1398
٢٣. احمدی هفشجانی ش، هاشمی ا, مدلسازی ولتاژ آستانه ترانزيستور با گيت احاطه شده دو ماده ای در شرايط کاری زير آستانه , چهارمین كنفرانس ملی پژ‍وهشهای كاربردی در مهندسی برق،‌ مكانيك و مكاترونيك - دانشگاه مالک اشتر - 1395
٢٤. عمرانپور شهرضا ش، هاشمی ا, افزايش تعداد ورودی گيتهای منطقی پايه مبتنی بر ساختار ابررسانای QPSJ , ششمين كنفرانس ملی پژ‍وهشهای كاربردی در مهندسی برق،‌ مكانيك و مكاترونيك - دانشگاه مالک اشتر - 1399



Books



Honors



Thesis
Number Student Name Title Defence Date
1. Kobra Beigi Analytical Modeling of Short Channel Effects in Junctionless FETs جمعه ١ فروردين ١
2. Zahra Ghanadian Analytical Modeling of Short Channel Effects in Surrounding Gate FETs by Scaling Theory جمعه ١ فروردين ١
3. Nasim Soleimani Effects of Mobile Carriers on Short channel Effects of Dual Material Double Gate MOSFETs جمعه ١ فروردين ١
4. Shekoofeh Ahmadi Modelling Short Channel Effects in Dual Material Surrounding Gate FETs in Subthreshold Condition جمعه ١ فروردين ١
5. Maryam Esmaili Investigation of Ballistic Effect on Short Channel Effects of Surrounding Gate FETs جمعه ١ فروردين ١
6. Rezvan Molavi Analytical Modeling of Short Channel Effects in Dual Material Double Gate MOSFETs جمعه ١ فروردين ١
7. Masshad Ghafari Effects of the Depletion Layer on Threshold Voltage of the Double Gate Tunnel FETs جمعه ١ فروردين ١
8. Pezhman Poormola Electrical Characteristics of Field Effect Diodes جمعه ١ فروردين ١






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